Product Details for Material from GaN Systems - GS66508T-E01-TY - MOSFET Top cooled 650V GaN Transistor

GS66508T-E01-TY GaN Systems MOSFET Top cooled 650V GaN Transistor

Part Nnumber
GS66508T-E01-TY
Description
MOSFET Top cooled 650V GaN Transistor
Producer
GaN Systems
Basic price

The product with part number GS66508T-E01-TY (MOSFET Top cooled 650V GaN Transistor) is from company GaN Systems. Minimal order quantity is 1 pc.


GaN Systems Product Category: MOSFET RoHS:  Details Id - Continuous Drain Current: 30 A Vds - Drain-Source Breakdown Voltage: 60 V Rds On - Drain-Source Resistance: 55 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 10 V Qg - Gate Charge: 6.5 nC Mounting Style: SMD/SMT Packaging: Tray Brand: GaN Systems Channel Mode: Enhancement Ciss - Input Capacitance: 200 pF Configuration: Single Technology: GaN


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