Product Details for Material from GaN Systems - GS66508P-E05-TY - MOSFET 650V 30A E-Mode GaN Preproduction Units

GS66508P-E05-TY GaN Systems MOSFET 650V 30A E-Mode GaN Preproduction Units

Part Nnumber
GS66508P-E05-TY
Description
MOSFET 650V 30A E-Mode GaN Preproduction Units
Producer
GaN Systems
Basic price

The product with part number GS66508P-E05-TY (MOSFET 650V 30A E-Mode GaN Preproduction Units) is from company GaN Systems. Minimal order quantity is 1 pc.


GaN Systems Product Category: MOSFET RoHS:  Details Id - Continuous Drain Current: 30 A Vds - Drain-Source Breakdown Voltage: 650 V Rds On - Drain-Source Resistance: 55 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 10 V Vgs th - Gate-Source Threshold Voltage: 1.6 V Qg - Gate Charge: 6.5 nC Mounting Style: SMD/SMT Packaging: Tray Brand: GaN Systems Channel Mode: Enhancement Ciss - Input Capacitance: 200 pF


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