Product Details for Material from GaN Systems - GS61008P-E03-TY - MOSFET 100V, 90A, E-Mode Preproduction Units

GS61008P-E03-TY GaN Systems MOSFET 100V, 90A, E-Mode Preproduction Units

Part Nnumber
GS61008P-E03-TY
Description
MOSFET 100V, 90A, E-Mode Preproduction Units
Producer
GaN Systems
Basic price

The product with part number GS61008P-E03-TY (MOSFET 100V, 90A, E-Mode Preproduction Units) is from company GaN Systems. Minimal order quantity is 1 pc.


GaN Systems Product Category: MOSFET RoHS:  Details Id - Continuous Drain Current: 90 A Vds - Drain-Source Breakdown Voltage: 100 V Rds On - Drain-Source Resistance: 7.4 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 10 V Vgs th - Gate-Source Threshold Voltage: 1.6 V Qg - Gate Charge: 16 nC Mounting Style: SMD/SMT Packaging: Tray Brand: GaN Systems Channel Mode: Enhancement Ciss - Input Capacitance: 345 pF Series: GS61002P, GS61004P, GS61006P, GS61008P Technology: GaN


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